1996 Jul 30

3

Philips Semiconductors

Product specification

N-channel silicon junction FETs

J108; J109; J110

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

STATIC CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−±25

V

gate-source voltage

open drain

−−25

V

gate-drain voltage

open source

−−25

V

forward gate current (DC)

−

50

mA

total power dissipation

−

400

mW

storage temperature

−65

150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

gate-source breakdown voltage

−−−25

V

gate-source cut-off voltage

V

J108

−3

−−10

V

J109

−2

−−6V

J110

−0.5

−−4V

drain current

J108

80

−−

mA

J109

40

−−

mA

J110

10

−−

mA

gate leakage current

−−−3nA

drain-source cut-off current

−−

3nA

drain-source on-state resistance

J108

−−

8

Ω

J109

−−

12

Ω

J110

−−

18

Ω