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AM29DL400B 数据表(PDF) 33 Page - Advanced Micro Devices

部件名 AM29DL400B
功能描述  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
PDF  47 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29DL400B 数据表(HTML) 33 Page - Advanced Micro Devices

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Am29DL400B
31
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std
Description
-70
-80
-90
-120 Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
80
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit
polling
Min
45
45
45
50
ns
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
20
20
25
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
35
35
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Zero Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1 Programming Operation (Note 2)
Byte
Typ
9
µs
Word
Typ
11
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns



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