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AM29F032B 数据表(PDF) 34 Page - Advanced Micro Devices |
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AM29F032B 数据表(HTML) 34 Page - Advanced Micro Devices |
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34 / 39 page  32 Am29F032B 21610D5 November 2, 2006 D A TA SH EE T AC CHARACTERISTICS Write (Erase/Program) Operations—Alternate CE# Controlled Writes Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Parameter Symbol Parameter Description Speed Options Unit JEDEC Std -75 -90 tAVAV tWC Write Cycle Time (Note 1) Min 70 90 ns tAVEL tAS Address Setup Time Min 0 ns tELAX tAH Address Hold Time Min 40 45 ns tDVEH tDS Data Setup Time Min 40 45 ns tEHDX tDH Address Hold Time Min 0 ns tGHEL tGHEL Read Recover Time Before Write Min 0 ns tWLEL tWS CE# Setup Time Min 0 ns tEHWH tWH CE# Hold Time Min 0 ns tELEH tCP Write Pulse Width Min 40 45 ns tEHEL tCPH Write Pulse Width High Min 20 ns tWHWH1 tWHWH1 Byte Programming Operation (Note 2) Typ 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note 2) Typ 1 sec Max 8 sec |
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