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AM29DL322DB70RWDI 数据表(PDF) 55 Page - Advanced Micro Devices |
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AM29DL322DB70RWDI 数据表(HTML) 55 Page - Advanced Micro Devices |
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55 / 56 page ![]() 54 Am29DL322D/323D/324D December 13, 2005 Revision C+4 (July 2, 1999) Device Bus Operations Sector Address Tables: In the note below the tables, corrected the bank address bit range for Am29DL323. Revision C+5 (September 27, 1999) Device Bus Operations Sector Address tables: Corrected the bank address bits specified. Revision D (December 17, 1999) Global Changed Am29DL322C/323C to Am29DL322D/323D to reflect new 0.23 µm process technology. Added 70 ns speed option. AC Characteristics Figure 17, Program Operations Timing; Figure 19, Chip/Sector Erase Operations: Deleted t GHWL and changed OE# waveform to start at high. Erase and Program Operations table; Alternate CE# Controlled Erase and Program Operations table: Changed the typical and maximum specifications for programming time. Erase and Programming Performance In the table, changed the typical and maximum specifi- cations for programming time. Physical Dimensions Replaced figures with more detailed illustrations. Revision D+1 (June 21, 2000) Global Added information on the Am29DL324 device. Device Bus Operations Table 7, Autoselect Codes: The SecSi Sector Indicator Bit values have changed from 80h and 00h to 81h and 01h, respectively. Command Definitions Table 14, Command Definitions: The SecSi Sector In- dicator Bit values have changed from 80h and 00h to 81h and 01h, respectively. Revision D+2 (August 3, 2000) Block Diagram Corrected “A0–A19” to “A0–A20”. Table 3. Sector Addresses for Top Boot Sector Devices Changed the second occurrence of “Bank 2” in the Am29DL324DT column to “Bank 1”. Added “A20 for Am29DL324DT” to the note. Table 5. Sector Addresses for Bottom Boot Sector Devices Changed the first occurrence of “Bank 2” in the Am29DL324DB column to “Bank 1”. Added “A20 for Am29DL324DB” to the note. Revision D+3 (October 6, 2000) Block Diagram Added OE# and BYTE# inputs to lower bank section. Ordering Information Deleted burn-in option. Changed 70 ns speed option from standard voltage range to regulated voltage range. Table 8, Top Boot Sector/Sector Block Addresses for Protection/Unprotection Corrected SA3 address range to 000011XXX. RESET#: Hardware Reset Pin Corrected reference to ICC current in DC Characteris- tics table. Revision D+4 (April 27, 2001) Distinctive Characteristics, General Description, SecSiTM (Secured Silicon) Sector Flash Memory Region Clarified that current version of device has 64 Kbyte SecSi Sector; future versions will have 256 bytes. Ordering Information Added valid combinations for “N” designator. Common Flash Memory Interface (CFI) Modified first paragraph to indicate that the CFI Query is not accessible when the device is executing an Em- bedded Algorithm. SecSi TM (Secured Silicon) Sector Flash Memory Region Added note indicating that ACC and unlock bypass are not available when programming the SecSi Sector. Enter SecSiTM Sector/Exit SecSi Sector Command Sequence Added statement that SecSi Sector is not accessible when the device is executing an Embedded Program or Embedded Erase algorithm. |
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