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AM29LV641DL121REF 数据表(PDF) 24 Page - Advanced Micro Devices

部件名 AM29LV641DL121REF
功能描述  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
PDF  57 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV641DL121REF 数据表(HTML) 24 Page - Advanced Micro Devices

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Am29LV640D/Am29LV641D
22366C6 January 22, 2007
D A TA
SH EET
Table 7.
System Interface String
Table 8.
Device Geometry Definition
Addresses (x16)
Data
Description
1Bh
0027h
V
CC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
0036h
V
CC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
0004h
Typical timeout per single word write 2N µs
20h
0000h
Typical timeout for Min. size buffer write 2N
µs (00h = not supported)
21h
000Ah
Typical timeout per individual block erase 2N ms
22h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
0005h
Max. timeout for word write 2N times typical
24h
0000h
Max. timeout for buffer write 2N times typical
25h
0004h
Max. timeout per individual block erase 2N times typical
26h
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Addresses (x16)
Data
Description
27h
0017h
Device Size = 2N byte
28h
29h
0001h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
0001h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)



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