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AM29LV641DL121REF 数据表(PDF) 41 Page - Advanced Micro Devices

部件名 AM29LV641DL121REF
功能描述  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIO??Control
PDF  57 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29LV641DL121REF 数据表(HTML) 41 Page - Advanced Micro Devices

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January 22, 2007 22366C6
Am29LV640D/Am29LV641D
39
D A TA
SH EE T
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
Speed Options
JEDEC
Std.
Description
90R
120R,
121R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)Min
90
120
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Word Programming Operation (Note 2)Typ
11
µs
tWHWH1
tWHWH1
Accelerated Word Programming Operation (Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.9
sec
tVHH
VHH Rise and Fall Time (Note 1)Min
250
ns
tVCS
VCC Setup Time (Note 1)Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns



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