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AM29PDL640G 数据表(PDF) 45 Page - Advanced Micro Devices

部件名 AM29PDL640G
功能描述  64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control
PDF  61 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PDL640G 数据表(HTML) 45 Page - Advanced Micro Devices

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December 13, 2005
Am29PDL640G
43
D A TA SH EE T
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 10 and Table 17 for test specifications
3. Measurements performed by placing a 50 ohm termination on the data pin with a bias of V
CC/2. The time from OE# high to
the data bus driven to V
CC/2 is taken as tDF.
.
Parameter
Description
Test Setup
Speed Options
JEDEC
Std.
63
73
83
98
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
65
70
85
90
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
65
708590
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
65
708590
ns
tPACC Page Access Time
Max
25
30
45
ns
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
45
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
25
30
45
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
25
30
45
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
4
5
ns
tOEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tOH
tCE
Data
WE#
Addresses
CE#f
OE#
HIGH Z
Valid Data
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tRH
tOE
tRH
0 V
RY/BY#
RESET#
tDF
Figure 12.
Read Operation Timings



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