4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs

Datasheet

SMSC USB2227/USB2228

13

Revision 1.91 (10-13-06)

DATASHEET

SM_CLE

75

A38

O8PD

SM Command Strobe:

This pin is an active high Command Latch Enable signal

for the SM device.

This pin has a weak pull-down resistor that is

permanently enabled.

SM_D[7:0]

72

71

70

69

68

67

66

65

B34

A36

A35

B33

A34

B32

A33

B31

I/O8PD

SM Data 7-0:

These pins are the bi-directional data signal SM_D7-

SM_D0.

The bi-directional data signal has an internal weak pull-

down resistor.

SM_nRE

81

A41

08PU

SM Read Enable:

This pin is an active low read strobe signal for SM

device.

When using the internal FET, this pin has an internal

weak pull-up resistor that is tied to the output of the

internal Power FET.

08

If an external FET is used (Internal FET is disabled),

then the internal pull-up is not available (external pull-

ups must be used, and should be connected to the

applicable Card Power Supply).

SM_nWE

82

B39

O8PU

SM Write Enable:

This pin is an active low write strobe signal for SM

device.

When using the internal FET, this pin has an internal

weak pull-up resistor that is tied to the output of the

internal Power FET.

08

If an external FET is used (Internal FET is disabled),

then the internal pull-up is not available (external pull-

ups must be used, and should be connected to the

applicable Card Power Supply).

SM_nWPS

76

B36

IPU

SM Write Protect Switch:

A write-protect seal is detected, when this pin is low.

This pin has an internally controlled weak pull-up

resistor.

SM_nB/R

77

A39

I

SM Busy or Data Ready:

This pin is connected to the BSY/RDY pin of the SM

device.

An external pull-up resistor is required on this signal.

The pull-up resistor must be pulled up to the same

power source that powers the SM/NAND flash device.

SYMBOL

128-PIN

VTQFP

124-PIN

DQFN

BUFFER

TYPE

DESCRIPTION