42

Am29F160D

Am29F160D_00_D6 November 2, 2006

D A TA SH EE T

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

programming typicals assume checkerboard pattern.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the four-bus-cycle sequence for the program command. See Table 9

for further information on command definitions.

6. The device has a guaranteed minimum erase and

program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

TSOP AND SO PIN CAPACITANCE

Notes:

1. Sampled, not 100% tested.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 3)

Unit

Comments

Sector Erase Time

1.0

8

s

Excludes 00h programming prior

to erasure (Note 4)

Chip Erase Time (Note 2)

25

s

Byte Programming Time

7

300

µs

Excludes system level overhead

(Note 5)

Word Programming Time

11

360

µs

Chip Programming Time

(Note 2)

Byte Mode

15

45

s

Word Mode

12

35

s

Description

Min

Max

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

–1.0 V

–100 mA

+100 mA

Parameter Symbol

Parameter Description

Test Setup

Typ

Max

Unit

Input Capacitance

6

7.5

pF

Output Capacitance

8.5

12

pF

Control Pin Capacitance

7.5

9

pF

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C

10

Years

125

°C

20

Years