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NE5209D 数据表(PDF) 8 Page - NXP Semiconductors |
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NE5209D 数据表(HTML) 8 Page - NXP Semiconductors |
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8 / 15 page ![]() Philips Semiconductors Product specification NE/SA5209 Wideband variable gain amplifier 1990 Aug 20 8 50 Ω 50 Ω 50 Ω +5V SOURCE OUTPUT 5209 Gain = 19dB + 20log10 VAGC and is in units of Volts, for VAGC ≤ 1V where VAGC = R 2 R 1 ) R2 V BG VBG VAGC R1 R2 SR00247 Figure 11. User-Programmable Fixed Gain Block All harmonic distortion products will be at least -50dBc over the audio spectrum. 50 Ω 50 Ω 50 Ω +5V SOURCE OUTPUT 5209 +5V RF INPUT FULL CARRIER AM (DSB) MODULATING SIGNAL .5V R9R VAGC SR00248 Figure 12. AM Modulator The high input impedance to the NE5209 makes matching to crystal filters relatively easy. The total delta gain of this system will approach 80dB. IF frequencies well into the UHF region can be configured with this type of architecture. 50 Ω 5209 CRYSTAL GAIN CONTROL SIGNAL FILTER 50 Ω OUTPUT 5209 5209 VAGC VAGC VAGC SR00249 Figure 13. Receiver AGC IF Gain RL 5209 RL ± ± VS RS RT RT VAGC VCC (+5V, unless otherwise noted) SR00250 Figure 14. Test Set-up 1 (Used for all Graphs) |
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