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NE5209D 数据表(PDF) 13 Page - NXP Semiconductors |
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NE5209D 数据表(HTML) 13 Page - NXP Semiconductors |
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13 / 15 page ![]() Philips Semiconductors Product specification NE/SA5209 Wideband variable gain amplifier 1990 Aug 20 13 10 100 1000 16 T = 25 °C VAGC = 1.1V RS = RL = 50Ω Rt = ∞ on INA See test-setup 1 Frequency (MHz) 0 Ω Termination on INB 50 Ω Termination on INB 14 12 10 8 6 4 2 0 SR00267 Figure 31. Noise Figure vs Frequency 1.4 –100 50 150 100 Temperature ( °C) 0 –50 1.35 1.3 1.25 1.2 1.15 1.1 1.05 1 Bandgap Load = 2k Ω VCC = 7.0V VCC = 6.0V VCC = 5.0V VCC = 4.5V SR00269 Figure 32. Bandgap Voltage vs Temperature and VCC 12 10 8 6 4 2 0 –60 –10 40 90 140 Temperature ( °C) RS = RL = 50Ω Rt = 50Ω R1 = R2 = 10k f = 100MHz See Figure 10 SR00268 Figure 33. Fixed Gain vs Temperature TOP VIEW - COMPONENT SIDE OUTB OUTA GND +VCC INB INA NE5209 TOP VIEW - SOLDER SIDE SR00270 Figure 34. VGA AC Evaluation Board Layout |
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