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ISTM4013 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISTM4013
功能描述  Anti-Paralle Thyristor-Thyristor Module
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISTM4013 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISTM4013 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISTM4013
eq MMO62-16IO6
Anti-Paralle Thyristor-Thyristor Module
www.iscsemi.com
2
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM
Repetitive peak off-state voltage
1600
V
VRRM
Repetitive peak reverse voltage
1600
V
IT(AV)
Average Forward Current @Tc=95℃
30
A
IRMS
RMS forward current per phase 180°sine
66
A
ITSM
Max. Forward Surge Current
TVJ = 45℃，VR=0V
t = 10 ms; (50 Hz), sine
400
A
t = 8,3 ms; (60 Hz), sine
300
A
Max. Forward Surge Current
TVJ = TVJM，VR=0V
t = 10 ms; (50 Hz), sine
340
A
t = 8,3 ms; (60 Hz), sine
365
A
I2t
Value For Fusing
TVJ = 45℃，VR=0V
t = 10 ms; (50 Hz), sine
800
A2S
t = 8,3 ms; (60 Hz), sine
770
A2S
Value For Fusing
TVJ = TVJM，VR=0V
t = 10 ms; (50 Hz), sine
580
A2S
t = 8,3 ms; (60 Hz), sine
555
A2S
(di/dt)cr
Critical Rate of Rise of Current
TVJ = TVJM; f = 50 Hz，tp=200us
VD=2/3VDRM,IG=0.3A,
diG/dt=0.3A/us
Repetitive,IT=90A
100
A/us
non-repetitive,IT=ITAVM
500
A/us
(dv/dt)cr
critical rate of rise of voltage,VD=2/3VDRM
R = ∞; method 1 (linear voltage rise),TVJ = TVJM
1000
V/us
PGM
max. gate power dissipation,TC=150℃
tp=30us
10
W
tp=300us
5
W
PGAVM
average gate power dissipation
0.5
W
Tj
Operating Junction temperature
-40 ~+150
℃
Tstg
Storage temperature
-40 ~+150
℃
Rthjc
Thermal Resistance Junction to Case
0.9
K/W
RthCH
Thermal Resistance Case to Heatsink
0.2
K/W
VISOL
Isolation Voltage
2500
V



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