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ISTM4013 数据表(PDF) 3 Page - Inchange Semiconductor Company Limited

部件名 ISTM4013
功能描述  Anti-Paralle Thyristor-Thyristor Module
PDF  4 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISTM4013 数据表(HTML) 3 Page - Inchange Semiconductor Company Limited

  ISTM4013 Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 2Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 3Page - Inchange Semiconductor Company Limited ISTM4013 Datasheet HTML 4Page - Inchange Semiconductor Company Limited  
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ISTM4013
eq MMO62-16IO6
Anti-Paralle Thyristor-Thyristor Module
www.iscsemi.com
3
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
IRRM
Repetitive peak reverse current
VR=VRRM,TVJ= 25℃
12
mA
IDRM
Repetitive peak off-state current VD=VDRM,TVJ= 25℃
12
mA
VT
Forward Voltage Drop
IT = 30A,TVJ= 25℃
1.30
V
IT = 60A,TVJ= 25℃
1.60
V
VGT
Gate Trigger Voltage
VD=6V,TVJ= 25℃
1.5
V
VD=6V,TVJ= -40℃
1.6
V
IGT
Gate Trigger Current
VD=6V,TVJ= 25℃
100
mA
VD=6V,TVJ= -40℃
150
mA
VGD
Gate non-trigger Voltage
VD=2/3VDRM,TVJ= 150℃
0.2
V
IGD
Gate non-trigger Current
5
mA
IH
Holding Current
VD = 6 V,RGK = ∞ ,TVJ= 25℃
100
mA
IL
Latching Current
IG=0.3A,diG/dt=0.3A/us,tp=10us,
TVJ= 25℃
150
mA
Tgd
Gate Controlled Delay Time
VD= 1/2VDRM, TVJ= 25℃
IG=0.3A,diG/dt=0.3A/us
2
us
tq
Turn-off Time
VR=100V,IT=20A,V=2/3VDRM,
di/dt=10A/us,dv/dt=15V/us,
tp=200us,TVJ=TVJM
150
us
ds
Creeping Distance on Surface
8
mm
dA
Creepage Distance in Air
4
mm
a
Max. allowable acceleration
50
m/s2



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