Philips Semiconductors

Product specification

Rectifier diodes

PBYR245CT series

Schottky barrier

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

V

• Reverse surge capability

• High thermal cycling performance

I

• low profile surface mounting

package

V

GENERAL DESCRIPTION

PINNING

SOT223

Dual, common cathode schottky

PIN

DESCRIPTION

rectifier

diodes

in

a

plastic

envelope. Intended for use as

1

anode 1

output rectifiers in low voltage, high

frequency switched mode power

2

cathode

supplies.

3

anode 2

The PBYR245CT series is supplied

in the surface mounting SOT223

tab

cathode

package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

PBYR2

40CT

45CT

V

RRM

Peak repetitive reverse

-

40

45

V

voltage

V

RWM

Working peak reverse

-

40

45

V

voltage

V

R

Continuous reverse voltage

T

-

40

45

V

I

O(AV)

Average rectified output

square wave;

δ = 0.5; T

-

2

A

current (both diodes

conducting)

I

FRM

Repetitive peak forward

square wave;

δ = 0.5; T

-

2

A

current per diode

I

FSM

Non-repetitive peak forward

t = 10 ms

-

6

A

current per diode

t = 8.3 ms

-

6.6

A

sinusoidal; T

surge; with reapplied V

RRM(max)

I

RRM

Peak repetitive reverse

pulse width and repetition rate

-

1

A

surge current per diode

limited by T

j max

T

j

Operating junction

-

150

˚C

temperature

T

stg

Storage temperature

- 40

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-a

Thermal resistance junction

pcb mounted, minimum footprint

-

156

-

K/W

to ambient

pcb mounted, pad area as in fig:1

-

70

-

K/W

k

a1

a2

13

2

4

1

23

July 1998

1

Rev 1.400