Philips Semiconductors

Product specification

Rectifier diodes

PBYR245CT series

Schottky barrier

Fig.2. Maximum forward dissipation P

diode; square current waveform where

I

Fig.3. Maximum forward dissipation P

diode; sinusoidal current waveform where a = form

factor = I

Fig.4. Typical and maximum forward characteristic

I

Fig.5. Typical reverse leakage current per diode;

I

Fig.6. Typical junction capacitance per diode;

C

Fig.7. Transient thermal impedance; per diode;

Z

0

0.5

1

1.5

0

0.2

0.4

0.6

0.8

1

D = 1.0

0.5

0.2

0.1

PBYR245CT

Rs = 0.183 Ohms

Vo = 0.27 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

D =

T

T

t

I

0

25

50

10

1

0.1

0.01

0.001

Reverse current, IR (mA)

Reverse voltage, VR (V)

50 C

75 C

100 C

125 C

PBYR245CT

Tj = 25 C

0

0.2

0.4

0.6

0.8

1

0

0.2

0.4

0.6

0.8

1

a = 1.57

1.9

2.2

2.8

4

PBYR245CT

Rs = 0.183 Ohms

Vo = 0.27 V

Average forward current, IF(AV) (A)

Forward dissipation, PF (W)

1

10

100

10

1000

100

Cd / pF

VR / V

PBYR245CT

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0

0.5

1

1.5

2

2.5

3

PBYR245CT

Forward voltage, VF (V)

Forward current, IF (A)

Tj = 25 C

Tj = 125 C

max

typ

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.01

0.1

1

10

100

PBYR245CT

pulse width, tp (s)

Transient thermal impedance, Zth j-sp (K/W)

D =

T

T

P

t

D

July 1998

3

Rev 1.400