SRAM

MT5C6401

Austin Semiconductor, Inc.

MT5C6401

Rev. 1.0 8/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

5

AC TEST CONDITIONS

Input pulse levels ...................................... Vss to 3.0V

Input rise and fall times ......................................... 5ns

Input timing reference levels ................................ 1.5V

Output reference levels ....................................... 1.5V

Output load ................................. See Figures 1 and 2

NOTES

1.

All voltages referenced to V

2.

-3V for pulse width < 20ns

3.

I

The specified value applies with the outputs

unloaded, and f =

1

Hz.

4.

This parameter is sampled.

5.

Test conditions as specified with the output loading

as shown in Fig. 1 unless otherwise noted.

6.

t

HZCE

and t

HZWE

are specified with CL = 5pF as in

Fig. 2. Transition is measured ±500mV typical from steady

state voltage, allowing for actual tester RC time constant.

7.

At any given temperature and voltage condition,

t

HZCE

is less than t

LZCE

, and t

HZWE

is less than t

LZWE

.

8.

WE\ is HIGH for READ cycle.

9.

Device is continuously selected. Chip enable is held in

its active state.

10. Address valid prior to, or coincident with, latest

occurring chip enable.

12. Chip enable (CE\) and write enable (WE\) can initiate

and terminate a WRITE cycle.

Fig. 1 Output Load

Equivalent

Fig. 2 Output Load

Equivalent

DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only)

123

123

123

123

1234

1234

1234

1234

DON’T CARE

UNDEFINED

LOW Vcc DATA RETENTION WAVEFORM

12345678

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123

123

123

123

1234

1234

1234

1234

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123

123

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DATA RETENTION MODE

V

4.5V

4.5V

V

DR

t

CDR

t

R

V

IH

V

IL

V

CC

CE\

5 pF

+5V

Q

255

480

+5V

Q

255

30pF

480

DESCRIPTION

SYM

MIN

MAX

UNITS

NOTES

2

---

V

---

300

µA

---

500

µA

Chip Deselect to Data

Retention Time

0

---

ns

4

Operation Recovery Time

---

ns

4, 11

CONDITIONS

Data Retention Current

or < 0.2V