MT5C6401C-25LSLASHXT datasheet(1/10 Pages) AUSTIN

部件名	MT5C6401C-25L/XT

功能描述	64K x 1 SRAM SRAM MEMORY ARRAY

PDF	10 Pages

Scroll/Zoom	100%

制造商	AUSTIN [Austin Semiconductor]

网页	http://www.austinsemiconductor.com

标志

1 / 10 page

SRAM

MT5C6401

Austin Semiconductor, Inc.

MT5C6401

Rev. 1.0 8/01

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

1

FEATURES

• Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns

• Battery Backup: 2V data retention

• High-performance, low-power CMOS double-metal

process

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE\

• All inputs and outputs are TTL compatible

OPTIONS

MARKING

• Timing

12ns access

-12

15ns access

-15

20ns access

-20

25ns access

-25

35ns access

-35

45ns access

-45*

55ns access

-55*

70ns access

-70*

• Package(s)

Ceramic DIP (300 mil)

C

No. 105

• Operating Temperature Ranges

Industrial (-40oC to +85oC)

IT

Military (-55oC to +125oC)

XT

• 2V data retention/low power

L

*Electrical characteristics identical to those provided for the 35ns

access devices.

PIN ASSIGNMENT

(Top View)

AVAILABLE AS MILITARY

SPECIFICATIONS

•

SMD 5962-86015

•

MIL-STD-883

GENERAL DESCRIPTION

The Austin Semiconductor SRAM family employs

high-speed, low-power CMOS designs using a four-transistor

memory cell. Austin Semiconductor SRAMs are fabricated

using double-layer metal, double-layer polysilicon

technology.

For flexibility in high-speed memory applications, Austin

Semiconductor offers chip enable (CE\) on all organizations.

This enhancement can place the outputs in High-Z for

additional flexibility in system design. The X1 configuration

features separate data input and output.

Writing to these devices is accomplished when write

enable (WE\) and CE\ inputs are both LOW. Reading is

accomplished when WE\ remains HIGH and CE\ goes LOW.

The device offers a reduced power standby mode when

disabled. This allows system designs to achieve low standby

power requirements.

All devices operate from a single +5V power supply and

all inputs and outputs are fully TTL compatible.

64K x 1 SRAM

SRAM MEMORY ARRAY

For more products and information

please visit our web site at

www.austinsemiconductor.com

22-Pin DIP (C)

(300 MIL)

1

2

3

4

5

6

7

8

9

10

11

22

21

20

19

18

17

16

15

14

13

12

A0

A1

A2

A3

A4

A5

A6

A7

Q

WE\

Vss

Vcc

A15

A14

A13

A12

A11

A10

A9

A8

D

CE\

类似零件编号 - MT5C6401C-25L/XT

制造商	部件名	数据表	功能描述
Micron Technology	MT5C6401	128Kb / 11P	64K x 1 SRAM

More results

类似说明 - MT5C6401C-25L/XT

制造商	部件名	数据表	功能描述
Austin Semiconductor	MT5C2565	122Kb / 11P	64K x 4 SRAM MEMORY ARRAY
	AS5C2568	145Kb / 9P	32K x 8 SRAM SRAM MEMORY ARRAY
	MT5C1005	182Kb / 13P	256K x 4 SRAM SRAM MEMORY ARRAY
	AS8S128K32	244Kb / 11P	128K x 32 SRAM SRAM MEMORY ARRAY
Micron Technology	MT5C6401	128Kb / 11P	64K x 1 SRAM
Austin Semiconductor	AS8S512K32	187Kb / 13P	512K x 32 SRAM SRAM MEMORY ARRAY
	AS5C4008	117Kb / 17P	512K x 8 SRAM SRAM MEMORY ARRAY
	AS8S512K32	204Kb / 14P	512K x 32 SRAM SRAM MEMORY ARRAY
	MT5C1001	100Kb / 13P	1M x 1 SRAM SRAM MEMORY ARRAY
	MT5C2564	94Kb / 12P	64K x 4 SRAM SRAM MEMORY ARRAY