7NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R209-044.D



ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Continuous

ID

7

A

Drain Current

Pulsed (Note 2)

IDM

14

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

33.8

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

3.7

V/ns

TO-220F1

26

W

TO-251/TO-252

52

W

Power Dissipation

DFN5060-8

PD

20

W

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature.

3. L=10mH, IAS=2.6A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

4. ISD≤7.0A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220F1

62.5

TO-251/TO-252

110

Junction to Ambient

DFN5060-8

θJA

75

°C/W

TO-220F1

4.8

TO-251/TO-252

2.4 (Note)

Junction to Case

DFN5060-8

θJC

6.25 (Note)

°C/W

Note: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.