7NM60

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 8

www.unisonic.com.tw

QW-R209-044.D



ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

600

V

Drain-Source Leakage Current

IDSS

VDS = 600V, VGS = 0V

10

μA

Forward

VGS = 30V, VDS = 0V

100

nA

Gate- Source Leakage Current

Reverse

IGSS

VGS = -30V, VDS = 0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

2.5

4.5

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID = 3.7A

0.95

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

424

pF

Output Capacitance

COSS

348

pF

Reverse Transfer Capacitance

CRSS

VDS=25V, VGS=0V, f=1.0MHz

35

pF

SWITCHING CHARACTERISTICS

Total Gate Charge

QG

17

nC

Gate-Source Charge

QGS

3.6

nC

Gate-Drain Charge

QGD

VDS=480V, VGS=10V, ID=7A

IG=1mA (Note 1, 2)

5.5

nC

Turn-On Delay Time

tD(ON)

5.6

ns

Turn-On Rise Time

tR

20

ns

Turn-Off Delay Time

tD(OFF)

50

ns

Turn-Off Fall Time

tF

VDD=100V, VGS=10V, ID =7A,

RG =25Ω (Note 1, 2)

36

ns

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode

Forward Current

IS

7

A

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

14

A

Drain-Source Diode Forward Voltage

VSD

IS=7A, VGS=0V

1.4

V

Body Diode Reverse Recovery Time

trr

320

nS

Body Diode Reverse Recovery Charge

Qrr

IS=7A, VGS=0V, dI/dt=100A/µs

3.2

nC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.