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ESDS312 数据表(PDF) 4 Page - Texas Instruments |
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ESDS312 数据表(HTML) 4 Page - Texas Instruments |
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4 / 24 page ![]() 5 Specifications 5.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)(1) MIN MAX UNIT IEC 61000-4-4 Electrical Fast Transient Peak Power at 25 °C 80 A IEC 61000-4-5 Surge (tp 8/20µs Peak Power at 25 °C 170 W Peak Current at 25 °C 25 A TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 155 °C (1) Operation outside the Absolute Maximum Rating may cause permanent device damage. Absolute Maximum Rating do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Condition. If used outside the Recommended Operating Condition but within the Absolute Maximum Rating, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime. 5.2 ESD Ratings - JEDEC Specifications VALUE UNIT V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/ JEDEC JS-001, all-pins(1) ±2500 V Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±1000 (1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process. 5.3 ESD Ratings - IEC Specifications VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2 Contact Discharge, all pins ±30000 V IEC 61000-4-2 Air Discharge, all pins ±30000 5.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VIN Input voltage 0 3.6 V TA Operating Free Air Temperature –40 125 °C 5.5 Thermal Information THERMAL METRIC (1) ESDS311 ESDS312 ESDS314 UNIT DYF (SOD323) DBV (SOT-23) DBV (SOT-23) 2 PINS 5 PINS 5 PINS RθJA Junction-to-ambient thermal resistance 739.2 163.9 127.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 287.7 113.4 78.9 °C/W RθJB Junction-to-board thermal resistance 605.5 76.9 43.9 °C/W ΨJT Junction-to-top characterization parameter 118.4 59.8 24.5 °C/W ΨJB Junction-to-board characterization parameter 591.1 76.8 43.7 °C/W ESDS311, ESDS312, ESDS314 SLVSEG9C – MAY 2018 – REVISED FEBRUARY 2024 www.ti.com 4 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: ESDS311 ESDS312 ESDS314 |
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