6 Detailed Description

6.1 Overview

The ESDS31x devices are unidirectional ESD Protection Diodes with a low capacitance. These devices can

dissipate high surge currents up to 25A (8/20µs) and ESD strikes above the maximum level specified by the

IEC 61000-4-2 International Standard. The low capacitance makes this device an excellent choice for protecting

high-speed signal interfaces such as Ethernet 10/100/1000Mbps and general purpose high speed data lines.

6.2 Functional Block Diagram

GND

I/O1

ESDS311

GND

I/O1

ESDS312

I/O2

GND

I/O2

I/O3

I/O4

I/O1

ESDS314

6.3 Feature Description

6.3.1 IEC 61000-4-4 EFT Protection

The I/O pins of ESDS311, ESDS312, and ESDS314 can withstand surge events (IEC 61000-4-5, 8/20µs

waveform) up to 25A and 170W. These devices also provide ESD protection up to ±30kV contact and ±30kV air

gap per IEC 61000-4-2 standard. The I/O pins can withstand an electrical fast transient (EFT) burst of up to 80A

(IEC 61000-4-4 5/50ns waveform, 4kV with 50Ω impedance). The capacitance between each I/O pin to ground is

4.5pF (typical) and 5.5pF (maximum). This device supports data rates up to 1Gbps.

The reverse DC breakdown voltage of each I/O pin is a minimum of 4.5V. This ensures that sensitive equipment

is protected from surges above the reverse standoff voltage of 3.6V. The I/O pins feature an ultra-low leakage

current of 100nA (maximum) with a bias of 3.6V. This device features an industrial operating range of –40°C to

+125°C.

6.4 Device Functional Modes

The ESDS31x devices are a passive integrated circuit that triggers when voltages are above VBRF or below

0.7V. During ESD events, voltages as high as ±30kV (air) can be directed to ground via the internal diode

network. When the voltages on the protected line fall below the trigger levels of ESDS31x (usually within a few

nano-seconds) the devices reverts to passive.

ESDS311, ESDS312, ESDS314

SLVSEG9C – MAY 2018 – REVISED FEBRUARY 2024

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