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LCP152 数据表(PDF) 6 Page - STMicroelectronics

部件名 LCP152
功能描述  Programmable transient voltage suppressor for SLIC protection
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

LCP152 数据表(HTML) 6 Page - STMicroelectronics

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Technical information
LCP1521S/LCP152DEE
6/11
2
Technical information
Figure 5.
LCP152 concept behavior
Figure 5. shows the classical protection circuit using the LCP152 crowbar concept. This
topology has been developed to protect the new high voltage SLICs. It allows to program the
negative firing threshold while the positive clamping value is fixed at GND.
When a negative surge occurs on one wire (L1 for example) a current IG flows through the
base of the transistor T1 and then injects a current in the gate of the thyristor Th1. Th1 fires
and all the surge current flows through the ground. After the surge when the current flowing
through Th1 becomes less negative than the holding current IH, then Th1 switches off.
When a positive surge occurs on one wire (L1 for example) the diode D1 conducts and the
surge current flows through the ground.
Figure 6.
Example of PCB layout based on LCP152S protection
Figure 6. shows the classical PCB layout used to optimize line protection.
The capacitor C is used to speed up the crowbar structure firing during the fast surge edges.
This allows to minimize the dynamical breakover voltage at the SLIC Tip and Ring inputs
during fast strikes. Note that this capacitor is generally present around the SLIC - Vbat pin.
So to be efficient it has to be as close as possible from the LCP152 Gate pin and from the
reference ground track (or plan) (see Figure 6.). The optimized value for C is 220 nF.
The series resitors Rs1 and Rs2 designed in Figure 5. represent the fuse resistors or the
PTC which are mandatory to withstand the power contact or the power induction tests
VRing
GND
Gate
TIP
RING
GND
-Vbat
C
Rs1
Rs2
L 1
L 2
V Tip
Th1
D1
T1
IG
ID1
To
line side
GND
To
SLIC side
LCP1521S



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