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PCF8570P 数据表(PDF) 9 Page - NXP Semiconductors |
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PCF8570P 数据表(HTML) 9 Page - NXP Semiconductors |
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9 / 20 page ![]() 1999 Jan 06 9 Philips Semiconductors Product specification 256 × 8-bit static low-voltage RAM with I2C-bus interface PCF8570 11 DC CHARACTERISTICS VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = −40 to +85 °C; unless otherwise specified. Notes 1. The Power-on reset circuit resets the I2C-bus logic when VDD <VPOR. The status of the device after a Power-on reset condition can be tested by sending the slave address and testing the acknowledge bit. 2. If the input voltages are a diode voltage above or below the supply voltage VDD or VSS an input current will flow; this current must not exceed ±0.5 mA. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VDD supply voltage 2.5 − 6.0 V IDD supply current standby mode VI =VDD or VSS; fSCL = 0 Hz; Tamb = −25 to +70 °C −− 5 µA operating mode VI =VDD or VSS; fSCL = 100 Hz −− 200 µA VPOR Power-on reset voltage note 1 1.5 1.9 2.3 V Inputs, input/output SDA VIL LOW level input voltage note 2 −0.8 − 0.3VDD V VIH HIGH level input voltage note 2 0.7VDD − VDD + 0.8 V IOL LOW level output current VOL = 0.4 V 3 −− mA ILI input leakage current VI =VDD or VSS −1 − +1 µA Inputs A0, A1, A2 and TEST ILI input leakage current VI =VDD or VSS −250 − +250 nA Inputs SCL and SDA Ci input capacitance VI =VSS −− 7pF Low VDD data retention VDDR supply voltage for data retention 1 − 6V IDDR supply current VDDR =1V −− 5 µA VDDR =1V; Tamb = −25 to +70 °C −− 2 µA Power-saving mode (see Figs 13 and 14) IDDR supply current TEST = VDD; Tamb =25 °C − 50 400 nA tHD2 recovery time − 50 −µs |
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