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NLAST44599 数据表(PDF) 4 Page - ON Semiconductor |
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NLAST44599 数据表(HTML) 4 Page - ON Semiconductor |
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4 / 12 page ![]() NLAST44599 http://onsemi.com 4 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.5 5.5 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.5 5.5 0.5 0.8 0.8 0.5 0.8 0.8 0.5 0.8 0.8 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 5.5 $0.2 $2.0 $2.0 mA IOFF Power Off Leakage Current, Select Inputs VIN = 5.5 V or GND 0 $10 $10 $10 mA ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 5.5 4.0 4.0 8.0 mA DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit RON Maximum “ON” Resistance (Figures 17 − 23) VIN = VIL or VIH VIS = GND to VCC IINI v 10.0 mA 2.5 3.0 4.5 5.5 85 45 30 25 95 50 35 30 105 55 40 35 W RFLAT (ON) ON Resistance Flatness (Figures 17 − 23) VIN = VIL or VIH IINI v10.0 mA VIS = 1 V, 2 V, 3.5 V 4.5 4 4 5 W INC(OFF) INO(OFF) NO or NC Off Leakage Current (Figure 9) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V 5.5 1 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 9) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA |
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