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PDTC114TK 数据表(PDF) 4 Page - NXP Semiconductors |
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PDTC114TK 数据表(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page ![]() 1998 May 19 4 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK Fig.3 DC current gain as a function of collector current; typical values. VCE =5V. (1) Tamb = 150 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 600 0 10−1 110 102 MGM902 IC (mA) hFE (1) (2) (3) 200 400 Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb =25 °C. (3) Tamb = −40 °C. handbook, halfpage 10−1 MGM901 10−2 VCEsat (V) (2) (3) (1) 10−1 110 102 IC (mA) |
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