1998 May 19

3

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

50

V

emitter-base voltage

open collector

−

5V

output current (DC)

−

100

mA

peak collector current

−

100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector cut-off current

−−

100

nA

collector cut-off current

−−

1

µA

−−

50

µA

emitter cut-off current

−−

100

nA

DC current gain

200

−−

collector-emitter saturation voltage

−−

150

mV

R1

input resistor

7

10

13

k

Ω

collector capacitance

−−

2.5

pF