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2SC4552 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 2SC4552
功能描述  isc Silicon NPN Power Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

2SC4552 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4552 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4552 Datasheet HTML 2Page - Inchange Semiconductor Company Limited 2SC4552 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc website： www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC4552
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC=10mA, Ib=0
60
--
--
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
--
--
10
μ
A
ICEO
Collector Cutoff Current
VCE= 60V; Ib=0
--
--
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
--
--
10
μ
A
hFE-1*
DC Current Gain
IC= 1.5A; VCE= 2V
100
--
--
hFE-2*
DC Current Gain
IC= 3A; VCE= 2V
100
--
400
hFE-3*
DC Current Gain
IC= 8A; VCE= 2V
60
--
--
VCE(sat)-1*
Collector-Emitter Saturation Voltage
IC= 8A; IB= 0.4A
--
--
0.3
V
VCE(sat)-2*
Collector-Emitter Saturation Voltage
IC= 12A; IB= 0.6A
--
--
0.5
V
VBE(sat)-1*
Base-Emitter Saturation Voltage
IC= 8A; IB= 0.4A
--
--
1.2
V
VBE(sat)-2*
Base-Emitter Saturation Voltage
IC= 12A; IB= 0.6A
--
--
1.5
V
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
--
180
--
pF
fT
Current-Gain—Bandwidth Product
IC= 1.5A ; VCE= 10V
--
120
--
MHz
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE
CLASSIFICATION
Marking
M
L
K
hFE-2*
100-200
150-300
200-400



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