2SC4552 datasheet(1/3 Pages) ISC

部件名	2SC4552

功能描述	isc Silicon NPN Power Transistor

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1

isc Silicon NPN Power Transistor

2SC4552

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 60V(Min)

·

High DC Current Gain-

: hFE= 100(Min)@ (VCE= 2V, IC= 3A)

·

Low Saturation Voltage-

: VCE(sat)= 0.3V(Max)@ (IC= 8A, IB= 0.4A)

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for use as a driver in DC/DC converters and

actuators.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Pulse

30

A

IB

Base Current-Continuous

7.5

A

PT

Total Power Dissipation @TC=25℃

30

W

Total Power Dissipation @Ta=25℃

2.0

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

类似零件编号 - 2SC4552

制造商	部件名	数据表	功能描述
NEC	2SC4552	161Kb / 6P	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Savantic, Inc.	2SC4552	262Kb / 4P	Silicon NPN Power Transistors
Renesas Technology Corp	2SC4552	285Kb / 8P	SILICON POWER TRANSISTOR
Savantic, Inc.	2SC4552	264Kb / 4P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	2SC4552	138Kb / 2P	Silicon NPN Power Transistor

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