Silicon PNP Power Transistor

MJD128

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -30mA, IB= 0

-120

--

--

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= -4A ,IB= -16mA

--

--

-2.0

V

VCE(sat)-2

Collector-Emitter Saturation voltage

IC= -8A ,IB= -80mA

--

--

-4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC=-8A; IB= -80mA

--

--

-4.5

V

VBE(on)

Base-Emitter On Voltage

IC= -4A ; VCE= -4V

--

--

-2.8

V

ICBO

Collector Cutoff Current

VCB= -120V, IE= 0

--

--

-10

uA

ICEO

Collector Cutoff Current

VCE= -120V, IB= 0

--

--

-5

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

--

--

-2

mA

hFE-1

DC Current Gain

IC= -4A ; VCE= -4V

1000

--

12000

hFE-2

DC Current Gain

IC= -8A ; VCE= -4V

100

--

--

COB

Output Capacitance

IE= 0; VCB= -10V,f= 0.1MHz

--

300

--

pF

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

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