MJD128 datasheet(1/2 Pages) ISC

部件名	MJD128

功能描述	Silicon PNP Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon PNP Power Transistor

MJD128

www.iscsemi.com

1

DESCRIPTION

·

High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -120V(Min)

APPLICATIONS

·

Designed for general purpose amplifier

and low speed switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-16

A

IB

Base Current-DC

-120

mA

PC

Collector Power Dissipation

TC=25℃

20

W

Collector Power Dissipation

Ta=25℃

1.75

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃

/W

Rth j-a

Thermal Resistance,Junction to Ambient

71.4

℃

/W

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