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SD56120 数据表(PDF) 6 Page - STMicroelectronics |
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SD56120 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 15 page ![]() Typical performance SD56120 6/15 4 Typical performance Figure 2. Capacitance vs drain voltage (per section) Figure 3. Gate-source voltage vs case temperature Figure 4. Drain current vs gate voltage Figure 5. Output power vs input power 0 1020 3040 50 Vds (V) 1 10 100 1000 C (pF) Ciss Coss Crss f = 1 MHz per section -25 0 25 50 75 100 Tc (°C) 0.96 0.98 1 1.02 1.04 VGS (NORMALIZED) VDS = 10 V per section Id = 1 A Id = 2 A Id = 5 A Id = 4 A Id = 3 A 2.5 3 3.5 4 4.5 5 Vgs (V) 0 1 2 3 4 5 6 Id (A) Vds = 10 V per section 01 2 3 4 Pin (W) 0 20 40 60 80 100 120 140 Pout (W) VDD = 28 V IDQ = 400 mA f = 860 MHz |
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