SD56120 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	SD56120

功能描述	RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Electrical characteristics

SD56120

4/15

Electrical characteristics

TCASE = +25

2.1

Static

Note:

REF. 7194566A

2.2

Dynamic

Note:

f1 = 860 MHz

PEP f2 = 860.1 MHz

Table 3.

Static (per section)

Symbol

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

VGS = 0 V

IDS = 1 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 200 mA

3.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.7

0.8

GFS

VDS = 10 V

ID = 3 A

mho

CISS

VGS = 0 V

VDS = 28 V

f = 1 MHz

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

2.8

Table 4.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

POUT

VDD = 28 V IDQ = 400 mA f = 860 MHz

100

GPS

VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 14

ηD

VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz 50

GPS

VDD = 28 V IDQ = 400 mA POUT = 100 W PEP

IMD

VDD = 28 V IDQ = 400 mA POUT = 100 W PEP

-28

dBt

Load

mismatch

VDD = 28 V IDQ = 400 mA POUT = 100 W f = 860 MHz

All phase angles

5:1

VSWR

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