3

CoolSiCªMOSFET650VG2

IMZA65R040M2H

Rev.2.1,2024-02-19

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified.

Note: for optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80%

of the maximum ratings stated in this datasheet.

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous DC drain current

1)

IDDC

-

-

-

-

46

32

A

TC=25°C

TC=100°C

Peak drain current

2)

IDM

-

-

142

A

TC=25°C,VGS=18V

Avalanche energy, single pulse

EAS

-

-

132

mJ

ID=4.9A,VDD=50V;seetable11

Avalanche energy, repetitive

EAR

-

-

0.66

mJ

ID=4.9A,VDD=50V;seetable11

Avalanche current, single pulse

IAS

-

-

4.9

A

-

MOSFETdv/dtruggedness

dv/dt

-

-

200

V/ns

VDS=0...400V

Gate source voltage (static)

3)

VGS

-7

-

23

V

-

Gate source voltage (transient)

VGS

-10

-

25

V

tp

≤500ns,dutycycle≤1%

Power dissipation

Ptot

-

-

172

W

TC=25°C

Storage temperature

Tstg

-55

-

150

°C

-

Operating junction temperature

Tj

-55

-

175

°C

-

Mounting torque

-

-

-

60

Ncm

M3 and M3.5 screws

Continuous reverse drain current

1)

ISDC

-

-

-

-

46

30.6

A

VGS=18V,TC=25°C

VGS=0V,TC=25°C

Peak reverse drain current

2)

ISM

-

-

-

-

142

43

A

TC=25°C,tp

≤250ns

TC=25°C

Insulation withstand voltage

VISO

-

-

n.a.

V

Vrms,TC=25°C,t=1min

1)LimitedbyTJ,max

2)PulsewidthtpulselimitedbyTj,max.

3) The maximum gate-source voltage in the application design should be in accordance to IPC-9592B.