5

CoolSiCªMOSFET650VG2

IMZA65R040M2H

Rev.2.1,2024-02-19

Final Data Sheet

4Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table5Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source voltage

VDSS

650

-

-

V

VGS=0V,ID=0.46mA

Gate threshold voltage

1)

VGS(th)

3.5

4.5

5.6

V

VDS=VGS,ID=4.6mA

Zero gate voltage drain current

IDSS

-

-

1

3

75

-

µA

VDS=650V,VGS=0V,Tj=25°C

VDS=650V,VGS=0V,Tj=175°C

Gate-source leakage current

IGSS

-

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

-

-

-

52

40

36

65

-

49

-

-

m

Ω

VGS=15V,ID=22.9A,Tj=25°C

VGS=18V,ID=22.9A,Tj=25°C

VGS=20V,ID=22.9A,Tj=25°C

VGS=18V,ID=22.9A,Tj=175°C

Internal gate resistance

RG,int

-

3.4

-

Ω

f=1MHz

1) Tested after 1 ms pulse at VGS = +20 V. “Linear mode” operation is not recommended. For assessment of potential “linear

mode” operation, please contact Infineon sales office.