Specifications and information are subject to change without notice.

WJ Communications, Inc

x Phone 1-800-WJ1-4401 x FAX: 408-577-6621 x e-mail: sales@wj.com x Web site: www.wj.com

Page 1 of 7 April 2007

FH1

High Dynamic Range FET

Product Features

SOT-89 Package

Applications

Product Description

The FH1 is a high dynamic range FET packaged in a low-

cost surface-mount package. The combination of low noise

figure and high output IP3 at the same bias point makes it

ideal for receiver and transmitter applications. The device

combines dependable performance with superb quality to

maintain MTTF values exceeding 100 years at mounting

temperatures of +85

qC. The FH1 is available the

environmentally-friendly lead-free/green/RoHS-compliant

SOT-89 package.

The device utilizes a high reliability GaAs MESFET

technology and is targeted for applications where high

linearity is required. It is well suited for various current

and next generation wireless technologies such as GPRS,

GSM, CDMA, and W-CDMA. In addition, the FH1 will

work for other applications within the 50 to 4000 MHz

frequency range such as fixed wireless.

Functional Diagram

Function

Pin No.

Gate

1

Drain

3

Source

2, 4

Specifications

(1)

DCElectrical Parameter

Units Min

Typ

Max

Saturated Drain Current, Idss

(2)

mA

100

140

170

Transconductance, Gm

mS

120

Pinch-off Voltage, Vp

(3)

V

-3

-1.5

RF Parameter

Units Min

Typ

Max

Operational Bandwidth

MHz

50 – 4000

Test Frequency

MHz

800

Small-signal Gain, Gss

dB

17

18

Max Stable Gain, Gmsg

dB

23

Output IP3

(4)

dBm

+38

+42

P1dB

dBm

+21

Minimum Noise Figure

(5)

dB

0.77

Drain Bias

V

+5

Gate Bias

V

0

1. DC and RF parameters are measured under the following conditions unless otherwise noted:

25

qC with Vds = 5V, Vgs = 0V, in a 50 : system.

2. Idss is measured with Vgs = 0V.

3. Pinch-off voltage is measured with Ids = 0.6 mA.

4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

5. The minimum noise figure has

.

.

.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

qC

Storage Temperature

-55 to +150

qC

Drain to Source Voltage

+7 V

Gate to Source Voltage

-6 V

Gate Current

4.5 mA

RF Input Power (continuous)

4 dB above Input P1dB

Junction Temperature

+220

qC

Operation of this device above any of these parameters may cause permanent damage.

Typical Performance

(6)

Parameter

Units

Typical

Frequency

MHz

900

1960

2140

S21

dB

19

16.5

16.5

S11

dB

-11

-20

-22

S22

dB

-10

-9

-9

Output IP3

(4)

dBm

+42

+40

+40

Output P1dB

dBm

+21.8

+22.1

+22.1

Noise Figure

dB

2.7

3.1

3.0

Drain Bias

5V @ 140mA

Gate Voltage

V

0

6. The device requires appropriate matching to become unconditionally stable. Parameters reflect

performance in an appropriate application circuit.

Ordering Information

Part No.

Description

FH1-G

High Dynamic Range FET

(lead-free/green/RoHS-compliant SOT-89 package)

1

2

3

4