NESG2030M04-A datasheet(2/10 Pages) CEL

2 / 10 page

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

2. Mounted on 1.08 cm2 • 1.0 mm (t) glass epoxy substrate

SYMBOLS

PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

8.0

VCEO

Collector to Emitter Voltage

2.3

VEBO

Emitter to Base Voltage

1.2

Collector Current

PT2

Total Power Dissipation

Junction Temperature

°C

150

TSTG

Storage Temperature

°C

-65 to +150

ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)

TYPICAL PERFORMANCE CURVES (TA = 25°C)

Collector Current, lC (mA)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

Collector to Emitter Voltage, VCE (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

Frequency, f (GHz)

INSERTION POWER GAIN

vs. FREQUENCY

VCE = 2 V

IC = 20 mA

0.1110

Collector Current, IC (mA)

GAIN BANDWIDTH vs.

COLLECTOR CURRENT

010

100

VCE = 2 V

f = 2 GHz

SYMBOLS

PARAMETERS

UNITS

RATINGS

Rth j-c

Junction to Case Resistance

°C/W

150

THERMAL RESISTANCE

100 μa

130 μa

40 μa

IB = 10 μa

160 μa

70 μa

190 μa

1000

100

0.1

VCE = 2 V

PART NUMBER

QUANTITY

NESG2030M04

50 pcs(non reel)

NESG2030M04-T2

3 kpcs/reel

ORDERING INFORMATION (Solder Contains Lead)

PART NUMBER

QUANTITY

NESG2030M04-A

50 pcs(non reel)

NESG2030M04-T2-A

3 kpcs/reel

ORDERING INFORMATION (Pb-Free)

NESG2030M04

NESG2030M04-A 数据表(PDF) 2 Page - California Eastern Labs

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