 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
NESG2030M04-A 数据表(PDF) 1 Page - California Eastern Labs |
|
|
|||||||||||||||||||||||||||||
NESG2030M04-A 数据表(HTML) 1 Page - California Eastern Labs |
|
|
1 / 10 page  NPN SiGe RF TRANSISTOR NESG2030M04 NPN SiGe HIGH FREQUENCY TRANSISTOR M04 DESCRIPTION NEC's NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 μA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M04" package is ideal for today's portable wireless applications. The NESG2030M04 is an ideal choice for LNA and oscillator requirements in all mobile communication systems. PART NUMBER NESG2030M04 EIAJ1 REGISTERED NUMBER 2SC5761 PACKAGE OUTLINE M04 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 nA 200 IEBO Emitter Cutoff Current at VEB = 0.5 V, IC = 0 nA 200 hFE DC Current Gain2 at VCE = 2 V, IC = 5 mA 200 400 Cre Reverse Transfer Capacitance3 at VCB = 2 V, IE = 0 mA, f = 1 GHz pF 0.17 0.22 NF Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT dB 0.9 1.1 Ga Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZOPT GHz 16 MSG Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 18 20 |S21E|2 Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz dB 16 18 P1dB Output Power at 1 dB compression point dBm 12 VCE = 2 V, IC = 20 mA, f = 2 GHz OIP3 Third Order Intercept Point, VCE = 2 V, IC = 20 mA, f = 2 GHz dBm 22 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 3. Collector to base capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance FEATURES Date Published: June 22, 2005 The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. |
类似零件编号 - NESG2030M04-A |
|
类似说明 - NESG2030M04-A |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
