1999 Apr 29

2

Philips Semiconductors

Product specification

NPN general purpose transistors

PMSTA05; PMSTA06

FEATURES

• High current (max. 500 mA)

• Low voltage (max. 80 V).

APPLICATIONS

• Primarily intended for telephony and professional

communication equipment.

DESCRIPTION

NPN transistor in a SOT323 plastic package.

PNP complements: PMSTA55 and PMSTA56.

MARKING

Note

1.

∗ = - : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

PMSTA05

∗1H

PMATA06

∗1G

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

handbook, halfpage

2

3

1

MAM062

3

2

1

Top view

Fig.1 Simplified outline (SOT323) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

PMSTA05

−

60

V

PMSTA06

−

80

V

collector-emitter voltage

open base

PMSTA05

−

60

V

PMSTA06

−

80

V

emitter-base voltage

open collector

−

4V

collector current (DC)

−

500

mA

peak collector current

−

500

mA

peak base current

−

500

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C