PMSTA05 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 29

Philips Semiconductors

Product speciﬁcation

NPN general purpose transistors

PMSTA05; PMSTA06

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

625

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

PMSTA05

IE = 0; VCB =60V

−

100

PMSTA06

IE = 0; VCB =80V

−

100

IEBO

emitter cut-off current

IC = 0; VEB =3V

−

500

hFE

DC current gain

IC = 10 mA; VCE =2V

−

IC = 100 mA; VCE = 1 V; note 1

−

VCEsat

collector-emitter saturation voltage

IC = 100 mA; IB = 10 mA; note 1

−

250

VBEsat

base-emitter saturation voltage

IC = 100 mA; IB = 10 mA; note 1

−

900

VBE

base-emitter voltage

IC = 100 mA; VCE =1V

−

1.2

transition frequency

IC = 10 mA; VCE = 2 V; f = 100 MHz 100

−

MHz

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