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SE2525L-R 数据表(PDF) 6 Page - SiGe Semiconductor, Inc.

部件名 SE2525L-R
功能描述  RangeCharger??2.4GHz Power Amplifier with Power Detector Preliminary Information
PDF  12 Pages
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制造商  SIGE [SiGe Semiconductor, Inc.]
网页  http://www.sige.com
标志 SIGE - SiGe Semiconductor, Inc.

SE2525L-R 数据表(HTML) 6 Page - SiGe Semiconductor, Inc.

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SE2525L
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
Preliminary Information
28-DST-01 Rev 2.1 Apr-25-2006
Confidential
6 of 12
QA042506
Internal Coupled Power Detector
Internal Coupled Positive Slope
Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, VB connected to VREG, SLOPESEL = Open Circuit, VDET IN/DETSEL =
GND, TA = 25 °C, as measured on SiGe Semiconductor’s SE2525L-EV1 evaluation board, unless
otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
PDR
POUT detect range
-
0
-
P1dB
dBm
VDET
Detector voltage
POUT = 23 dBm
-
1.15
-
V
VDET
Detector voltage
POUT = 19 dBm
-
0.73
-
V
VDET
Detector voltage
POUT = NO RF
-
0.35
-
V
PDZOUT
Output Impedance
-
250
-
700
Ω
PDZLOAD
DC load impedance
-
10
-
-
kΩ
Internal Coupled Negative Slope
Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, VB connected to VREG, VDETOUT load = 2.4 kΩ to ground, SLOPESEL =
VDET IN/DETSEL = GND, TA = 25 °C, as measured on SiGe Semiconductor’s SE2525L-EV1 evaluation
board, unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
PDR
POUT detect range
-
0
-
P1dB
dBm
VDET
Detector voltage
POUT = 23 dBm
-
0.42
-
V
VDET
Detector voltage
POUT = 19 dBm
-
0.64
-
V
VDET
Detector voltage
POUT = NO RF
-
0.90
-
V
SE2525L Internal Coupled Power Detector
(Positive)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
6
8
10
12
14
16
18
20
22
24
26
28
Output Power (dBm)
SE2525L Internal Coupled Power Detector
(Negative)
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
7
9
11
13
15
17
19
21
23
25
Output Power (dBm)
Figure 3: SE2525L Internal Coupled Power Detector Characteristic



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