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SE2525L-R 数据表(PDF) 7 Page - SiGe Semiconductor, Inc. |
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SE2525L-R 数据表(HTML) 7 Page - SiGe Semiconductor, Inc. |
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7 / 12 page ![]() SE2525L RangeCharger™ 2.4GHz Power Amplifier with Power Detector Preliminary Information 28-DST-01 Rev 2.1 Apr-25-2006 Confidential 7 of 12 QA042506 External Coupled Power Detector External Coupled Positive Slope Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, VB connected to VREG, TA = 25 °C, SLOPESEL = Open Circuit, VDET IN/DETSEL = open circuit, as measured on SiGe Semiconductor’s SE2525L-EV1 evaluation board, unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit PDET Input power detect range - -10 - 10 dBm VDET Detector voltage (1) POUT = 23 dBm - 1.18 - V VDET Detector voltage (1) POUT = 19 dBm - 0.8 - V VDET Detector voltage (1) POUT = NO RF - 0.35 - V ZDET Input Impedance - - 275//1.1 - Ω//pF PDZOUT Output Impedance - 250 - 700 Ω PDZLOAD DC load impedance - 10 - - kΩ (1) POUT measured at the input to the 17dB microstrip coupler on SiGe Semiconductor’s SE2525L-EV1 evaluation board External Coupled Negative Slope Conditions: VCC = VEN = 3.3 V, f = 2.45 GHz, VB connected to VREG, TA = 25 °C, VDETOUT load = 2.4 kΩ to ground, SLOPESEL = GND, VDET IN/DETSEL = open circuit, as measured on SiGe Semiconductor’s SE2525L- EV1 evaluation board, unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit PDET Input power detect range - -10 - 10 dBm VDET Detector voltage (1) POUT = 23 dBm - 0.3 - V VDET Detector voltage (1) POUT = 19 dBm - 0.56 - V VDET Detector voltage (1) POUT = NO RF - 0.90 - V (1) POUT measured at the input to the 17 dB microstrip coupler on SiGe Semiconductor’s SE2525L-EV1 evaluation board SE2525L External Coupled Power Detector (Positive) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 6 8 10 12 14 16 18 20 22 24 26 28 Output Power (dBm) SE2525L External Coupled Power Detector (Negative) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 7 9 11 13 15 17 19 21 23 25 Output Power (dBm) Figure 4: SE2525L External Coupled Power Detector Characteristic |
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