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IRFS3607 数据表(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

部件名 IRFS3607
功能描述  Single N-Channel MOSFET
PDF  4 Pages
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制造商  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
网页  https://www.evvosemi.com
标志 EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRFS3607 数据表(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

  IRFS3607 Datasheet HTML 1Page - EVER SEMICONDUCTOR CO.,LIMITED IRFS3607 Datasheet HTML 2Page - EVER SEMICONDUCTOR CO.,LIMITED IRFS3607 Datasheet HTML 3Page - EVER SEMICONDUCTOR CO.,LIMITED IRFS3607 Datasheet HTML 4Page - EVER SEMICONDUCTOR CO.,LIMITED  
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IRFS3607
Single N-Channel MOSFET
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V1,6
120
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1,6
85
A
IDM
Pulsed Drain Current2
250
A
EAS
Single Pulse Avalanche Energy3
57.8
mJ
IAS
Avalanche Current
34
A
PD@TC=25℃
Total Power Dissipation4
150
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-Ambient
RθJA
1
---
℃
60
/W
Thermal Resistance Junction-Case
RθJC
1
---
℃
1
/W
BVDSS
RDSON
ID
80V
6.5m
Ω
120A
 Advanced Trench MOS Technology
 100% EAS Guaranteed
 Green Device Available
 Super Low Gate Charge
Applications
Absolute Maximum Ratings
Thermal Data
TO263 Pin Configuration
Product Summary
Features
 Power Tools.
 UPS
 Synchronous Rectification in SMPS.
Rev:2023A2
1


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