Symbol

BVDSS

RDS(ON)

RDS(ON)

VGS(th)

Parameter

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance2

Static Drain-Source On-Resistance2

Gate Threshold Voltage

Unit

V

m



m



V

IDSS

Drain-Source Leakage Current

uA

IGSS

Conditions

VGS=0V , ID=250uA

VGS=10V , ID=20A

VGS=4.5V , ID=20A

VGS=VDS , ID =250uA

VDS=64V , VGS=0V , TJ=25℃

VDS=64V , VGS=0V , TJ=55℃

VGS=±20V , VDS=0V

VDS=5V , ID=20A

VDS=0V , VGS=0V

Gate-Source Leakage Current

Forward Transconductance

Gate Resistance

, f=1MHz

nA

S



Total Gate Charge (10V)

VDS=40V , VGS=10V , ID=20A

nC

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

VDD=40V , VGS=10V , RG=3

,

ID=20A

ns

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

VDS=40V , VGS=0V , f=1MHz

pF

Output Capacitance

gfs

Rg

Qg

Qgs

Qgd

Td(on)

Tr

Td(off)

Tf

Ciss

Coss

Crss

Min.

80

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1.2

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Reverse Transfer Capacitance

---

Typ.

---

5

7

---

---

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75

0.5

40

7.2

6.5

8.3

4.2

36

6.9

2860

410

38

Max.

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6.5

9

2.3

1

5

±100

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Conditions

VG=VD=0V , Force Current

VGS=0V , IS=A , TJ=25℃

IF=20A , dI/dt=100A/µs , TJ=25℃

Symbol

IS

VSD

trr

Qrr

Parameter

Continuous Source Current1,5

Diode Forward Voltage2

Reverse Recovery Time

Reverse Recovery Charge

Min.

---

---

---

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Typ.

---

0.77

27

89

Max.

48

1.0

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Unit

A

V

nS

nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=34A

4.The power dissipation is limited by 150℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

6.The maximum current rating is package limited.

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Diode Characteristics

Rev:2023A2

2

IRFS3607

Single N-Channel MOSFET