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IRLL024N 数据表(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

部件名 IRLL024N
功能描述  N-Ch 60V Fast Switching MOSFETs
PDF  4 Pages
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制造商  EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]
网页  https://www.evvosemi.com
标志 EVVOSEMI - EVER SEMICONDUCTOR CO.,LIMITED

IRLL024N 数据表(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED

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IRLL024N
N-Ch 60V Fast Switching MOSFETs
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25
℃
Continuous Drain Current, VGS @ 10V1
5
A
ID@TA=70
℃
Continuous Drain Current, VGS @ 10V1
3.5
A
IDM
Pulsed Drain Current2
30
A
EAS
Single Pulse Avalanche Energy3
22
mJ
IAS
Avalanche Current
21
A
PD@TA=25
℃
Total Power Dissipation4
2.7
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Symbol
Parameter
Typ.
Max.
Unit
Thermal Resistance Junction-ambient
RθJA
1
---
℃
85
/W
Thermal Resistance Junction-Case
RθJC
1
---
℃
45
/W
BVDSS
RDSON
ID
60V
50m
Ω
5A
 Green Device Available
 Super Low Gate Charge
 Excellent CdV/dt effect decline
The IRLL024N is the high cell density
trenched N-ch MOSFETs, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The IRLL024N meet the RoHS and
Green Product requirement with full function
reliability approved.
Advanced high cell density Trench
technology
Description
Absolute Maximum Ratings
Thermal Data
SOT223 Pin Configuration
Product Summary
Rev:2023A2
1


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