Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=4A

---

---

50

m



VGS=4.5V , ID=2A

---

---

60

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=4A

---

28.3

---

S

Qg

Total Gate Charge (10V)

VDS=48V , VGS=10V , ID=4A

---

19

---

nC

Qgs

Gate-Source Charge

---

2.6

---

Qgd

Gate-Drain Charge

---

4.1

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V , RG=3.3



ID=4A

---

3

---

ns

Tr

Rise Time

---

34

---

Td(off)

Turn-Off Delay Time

---

23

---

Tf

Fall Time

---

6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1027

---

pF

Coss

Output Capacitance

---

65

---

Crss

Reverse Transfer Capacitance

---

46

---

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

5

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=4A , dI/dt=100A/µs ,

TJ=25

℃

---

12.1

---

nS

Qrr

Reverse Recovery Charge

---

6.7

---

nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=21A

4.The power dissipation is limited by 150

℃ junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Diode Characteristics

IRLL024N

N-Ch 60V Fast Switching MOSFETs

Rev:2023A2

2