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SSR1008/5 数据表(PDF) 1 Page - Solid States Devices, Inc |
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SSR1008/5 数据表(HTML) 1 Page - Solid States Devices, Inc |
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1 / 2 page ![]() Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet FEATURES: • Extremely Low Forward Voltage Drop • Low Reverse Leakage • Hermetically Sealed Package • Guard Ring for Overvoltage Protection • Eutectic Die Attach • 175°C Operating Junction Temperature • TX, TXV, or Space Level Screening Available SSR1008/5 SSR1009/5 SSR1010/5 10 AMP 80 ─ 100 VOLTS SCHOTTKY RECTIFIER TO-5 MAXIMUM RATINGS RATING SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage and DC Blocking Voltage SSR1008/5 SSR1009/5 SSR1010/5 VRRM VRWM VR 80 90 100 Volts Average Rectified Output Current 1/ (Resistive Load, 60Hz, Sine Wave, TA=25°C) IO 10 Amps Peak Surge Current 1/ (8.3 ms Pulse, Half Sine Wave, superimposed on IO, allow junction to reach equilibrium between pulses, TA=25°C) IFSM 150 Amps Operating and Storage Temperature TOP & TSTG -65 to +175 ° C Maximum Thermal Resistance 1/ Junction to Case RθJC 7.0 ° C/W Notes: 1/ For optimal performance, connect leads 1 & 2 together (Anode). NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: SH0022C DOC |
类似零件编号 - SSR1008/5 |
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类似说明 - SSR1008/5 |
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