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APTGF200U120DG 数据表(PDF) 4 Page - Microsemi Corporation

部件名 APTGF200U120DG
功能描述  Single Switch with Series diodes NPT IGBT Power Module
PDF  6 Pages
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制造商  MICROSEMI [Microsemi Corporation]
网页  http://www.microsemi.com
标志 MICROSEMI - Microsemi Corporation

APTGF200U120DG 数据表(HTML) 4 Page - Microsemi Corporation

  APTGF200U120DG Datasheet HTML 1Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 2Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 3Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 4Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 5Page - Microsemi Corporation APTGF200U120DG Datasheet HTML 6Page - Microsemi Corporation  
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APTGF200U120DG
www.microsemi.com
4 – 6
Typical Performance Curve
Output characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
200
400
600
800
02
46
8
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Output Characteristics (VGE=10V)
TJ=25°C
TJ=125°C
0
50
100
150
200
0
123
4
VCE, Collector to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Transfer Characteristics
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
048
12
16
VGE, Gate to Emitter Voltage (V)
250µs Pulse Test
< 0.5% Duty cycle
Gate Charge
VCE=240V
VCE=600V
VCE=960V
0
2
4
6
8
10
12
14
16
18
0
200
400
600
800 1000 1200 1400
Gate Charge (nC)
IC = 200A
TJ = 25°C
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
7
8
9
9
10111213141516
VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
TJ = 25°C
250µs Pulse Test
< 0.5% Duty cycle
Ic=400A
Ic=200A
Ic=100A
0
1
2
3
4
5
6
-50
-25
0
255075
100
125
TJ, Junction Temperature (°C)
On state Voltage vs Junction Temperature
250µs Pulse Test
< 0.5% Duty cycle
VGE = 15V
0.70
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.20
-50
-25
0
25
50
75
100 125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Junction Temp.
0
50
100
150
200
250
300
350
-25
0
25
50
75
100
125
150
TC, Case Temperature (°C)
DC Collector Current vs Case Temperature



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