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APTGF200U120DG 数据表(PDF) 5 Page - Microsemi Corporation |
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APTGF200U120DG 数据表(HTML) 5 Page - Microsemi Corporation |
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5 / 6 page ![]() APTGF200U120DG www.microsemi.com 5 – 6 VGE = 15V 25 30 35 40 45 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-On Delay Time vs Collector Current VCE = 600V RG = 1.2Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current VCE = 600V RG = 1.2Ω VGE=15V 20 60 100 140 180 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 1.2Ω TJ = 25°C TJ = 125°C 20 30 40 50 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 1.2Ω TJ=125°C, VGE=15V 0 20 40 60 80 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current VCE = 600V RG = 1.2Ω TJ = 125°C 0 8 16 24 32 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V R G = 1.2Ω Eon, 200A Eoff, 200A Eon, 100A Eoff, 100A 0 8 16 24 32 40 48 56 02.557.5 10 12.5 Gate Resistance (Ohms) Switching Energy Losses vs Gate Resistance VCE = 600V V GE = 15V TJ= 125°C Cies Cres Coes 100 1000 10000 100000 0 1020304050 Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) |
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