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PI0128WSN 数据表(PDF) 2 Page - AMI SEMICONDUCTOR |
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PI0128WSN 数据表(HTML) 2 Page - AMI SEMICONDUCTOR |
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2 / 8 page ![]() PI0128WSN, PI0256WSN, PI0512WSN Engineering Data Sheet Page 2 of 8 Revised March 21, 2002 Figure 2. Geometry and layout of photodiode pixels. During normal operation, the photons incident in or near the NP photodiode junction generate free charges that are collected and stored on the junction's depletion capacitance. The number of collected charges is proportional to the light exposure. Figure 3 shows the stored signal charge as function of light exposure at a wavelength of 575 nm. The exposure is the product of the light intensity in nW/cm2 and integration time in seconds. The charge accumulates linearly until reach- ing the saturation charge, and the corresponding exposure is the saturation exposure. The responsivity may be calculated as the saturation charge divided by saturation exposure. The predicted typical responsivity of a photodiode is 3.5´10-4 C/J/cm2 at 575 nm. Figure 4 shows the predicted responsivity of the photodiodes as a function of wavelength. 0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 Exposure (nJ/cm2) Saturation Charge Saturation Exposure Figure 3. Stored signal charge as function of exposure at a wavelength of 575 nm. |
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