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PI0128WSN 数据表(PDF) 7 Page - AMI SEMICONDUCTOR |
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PI0128WSN 数据表(HTML) 7 Page - AMI SEMICONDUCTOR |
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7 / 8 page ![]() PI0128WSN, PI0256WSN, PI0512WSN Engineering Data Sheet Page 7 of 8 Revised March 21, 2002 Electro-Optical Characteristics The following table lists the electro-optical characteristics. Table 4. Electro-optical characteristics at 25 oC. Parameters Symbol Min Typical Max Units Center-to-center spacing 50 µm Aperture width 2500 µm Pixel area A 1.25x10-3 cm2 Fill factor 1 FF 86 % Quantum efficiency 1,2 QE 70 % Responsivity 1,2 R 3.5´10-4 C/J/cm2 Nonuniformity of response 3 2 5 +/-% Saturation exposure 2 Esat 160 185 nJ/cm2 Saturation charge 4 Qsat 55 65 pC Average dark current 5 0.2 0.6 pA Spectral response peak l 600 nm Spectral response range 6 180 – 1000 nm Notes: 1. Fill factor, quantum efficiency, and responsivity are related by the equation R = (qel/hc).QE.FF.A, where qe is the charge of an electron and hc/l is the energy of a photon at a given wavelength. Responsivity is therefore given per pixel. 2. At wavelength of 575 nm (yellow-green) and with no window. 3. Measured at 50% Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter. 4. Saturation charge specified for a video output bias of 4.5 volts. 5. Max dark leakage £ 1.5 x average dark leakage measured with an integration period of 500 ms at 25oC. 6. From 250-1000 nm, responsivity ³ 20% of its peak value. |
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