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PI0128WSN 数据表(PDF) 7 Page - AMI SEMICONDUCTOR

部件名 PI0128WSN
功能描述  50-mm-Pitch Wide Aperture Spectroscopic Photodiode Arrays
PDF  8 Pages
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制造商  AMI [AMI SEMICONDUCTOR]
网页  http://www.amis.com
标志 AMI - AMI SEMICONDUCTOR

PI0128WSN 数据表(HTML) 7 Page - AMI SEMICONDUCTOR

  PI0128WSN Datasheet HTML 1Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 2Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 3Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 4Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 5Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 6Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 7Page - AMI SEMICONDUCTOR PI0128WSN Datasheet HTML 8Page - AMI SEMICONDUCTOR  
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PI0128WSN, PI0256WSN, PI0512WSN
Engineering Data Sheet
Page 7 of 8
Revised March 21, 2002
Electro-Optical Characteristics
The following table lists the electro-optical characteristics.
Table 4. Electro-optical characteristics at 25 oC.
Parameters
Symbol
Min
Typical
Max
Units
Center-to-center spacing
50
µm
Aperture width
2500
µm
Pixel area
A
1.25x10-3
cm2
Fill factor 1
FF
86
%
Quantum efficiency 1,2
QE
70
%
Responsivity 1,2
R
3.5´10-4
C/J/cm2
Nonuniformity of response 3
2
5
+/-%
Saturation exposure 2
Esat
160
185
nJ/cm2
Saturation charge 4
Qsat
55
65
pC
Average dark current 5
0.2
0.6
pA
Spectral response peak
l
600
nm
Spectral response range 6
180 – 1000
nm
Notes:
1. Fill factor, quantum efficiency, and responsivity are related by the equation R = (qel/hc).QE.FF.A, where qe is the
charge of an electron and hc/l is the energy of a photon at a given wavelength. Responsivity is therefore given per
pixel.
2. At wavelength of 575 nm (yellow-green) and with no window.
3. Measured at 50% Vsat with an incandescent tungsten lamp filtered with an Schott KG-1 heat-absorbing filter.
4. Saturation charge specified for a video output bias of 4.5 volts.
5. Max dark leakage £ 1.5 x average dark leakage measured with an integration period of 500 ms at 25oC.
6. From 250-1000 nm, responsivity ³ 20% of its peak value.



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